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IXTQ200N075T - Power MOSFET

Download the IXTQ200N075T datasheet PDF. This datasheet also covers the IXTH200N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS.

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Note: The manufacturer provides a single datasheet file (IXTH200N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTQ200N075T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTQ200N075T. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.0 V A mΩ ...

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cement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 75 75 ± 20 200 75 540 25 750 V V V A A A A mJ 3 V/ns 430 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTQ200N075T N-ChannelMOSFET INCHANGE

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