Download the IXTQ230N085T datasheet PDF.
This datasheet also covers the IXTH230N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values
Min. Typ. Max. 85 V
2.0 4.0 V
± 200 nA
5 mA 250 mA
3.7 4.4 mW
Advantages Eas.
Note: The manufacturer provides a single datasheet file (IXTH230N085T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IXTQ230N085T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTQ230N085T. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH230N085T IXTQ230N085T VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ T...
View more extracted text
IXTH230N085T IXTQ230N085T VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤IDM, di/dt ≤100 A/ms, VDD ≤VDSS TJ ≤175°C, RG = 3.3Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 85 V 85 V G DS (TAB) ± 20 230 75 520 40 1.0 3 V A A A A J V/ns TO-3P (IXTQ) G D S (TAB) 550 -55 ... +175 175 -55 ...
IXTQ230N085T Datasheet
