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IXTQ52P10P - P-Channel MOSFET

Download the IXTQ52P10P datasheet PDF. This datasheet also covers the IXTA52P10P variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z z z z z 1.6mm (0.062 in. ) from case for 10s Plastic body for 10s Mounting torque TO-247 TO-3P TO-220 TO-263 (TO-3P,TO-220,TO-247) 300 260 1.13/10 6.0 5.5 3.0 2.5 International standard packages Fast intrinsic diode Dynamic dV/dt Rated Avalanche Rated Rugged PolarPTM process Low QG and Rds(on) characterization Low Drain-to-Tab capacitance Low package inductance - easy to drive and to protect g.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA52P10P-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTQ52P10P P-Channel MOSFET INCHANGE
IXTQ52N30P N-Channel MOSFET INCHANGE
IXTQ50N20P N-Channel MOSFET INCHANGE
IXTQ50N25T Trench Gate Power MOSFET IXYS
IXTQ102N15T Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTQ52N30P Power MOSFET
IXTQ50N20P Power MOSFET
IXTQ100N25P N-Channel MOSFET
IXTQ110N055P PolarHT Power MOSFET
IXTQ110N10P N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P TO-247 (IXTH) RDS(on) VDSS ID25 = = ≤ - 100V - 52A 50mΩ TO-220 (IXTP) G S D (TAB) G D D (TAB) S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings -100 -100 ±20 ±30 - 52 -130 - 52 1.5 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g g D S D (TAB) TO-3P (IXTQ) G D S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features: z z z z z z z z 1.6mm (0.062 in.