IXTQ62N15P Datasheet | IXYS

Features l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150° C Characteristic Values Min. Typ. Max. 150 3.0 5.5 ±100 25 250 33 40 V V n A µA µA mΩ l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2006 IXYS All rights reserved DS99154E(12/05) IXTA 62N15P IXTP 62N15P IXTQ 62N15P .. Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 14 24 2250 VGS = 0 V, VDS = 25 V, f = 1 MHz 660 185 27 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 10 Ω (External) 38 76 35 70 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 38 S p F p F p F ns ns ns ns n C n C n C 0.42° C/W (TO-3P) (TO-220) 0.21 0.25 ° C/W ° C/W TO-3P (IXTQ) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS VDS= 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr QRM Test Conditions VGS = 0 V Repetitive Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. 62 150 1.5 150 2.0 A A V ns µC TO-220 (IXTP) Outline IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V TO-263 (IXTA) Outline Pins: 1 - Gate 3 - Source - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTA 62N15P IXTP 62N15P IXTQ 62N15P .. Fig. 1....