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IXTQ96N20P Datasheet N-Channel MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 96N20P IXTQ 96N20P IXTT 96N20P V DSS ID25 RDS(on) = 200 V = 96 A ≤ 24 mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P, TO-247) TO-3P TO-247 TO-268 Maximum Ratings 200 V 200 V ±20 V ±30 V 96 A 75 A 225 A 60 A 50 mJ 1.5 J 10 V/ns G DS TO-3P (IXTQ) G DS TO-268 (IXTT) (TAB) (TAB) 600 W -55 ...

+175 °C 175 °C -55 ...

+150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 200 V VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 150° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 24.

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