IXTT110N10P Datasheet N-Channel MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTT110N10P datasheet PDF. This datasheet also includes the IXTQ110N10P variant, as both parts are published together in a single manufacturer document.

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IXTT110N10P n-channel mosfet by IXYS (now Littelfuse) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IXTQ110N10P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IXTT110N10P
Manufacturer	IXYS (now Littelfuse)
File Size	612.25 KB
Description	N-Channel MOSFET
Download	IXTT110N10P Download (PDF)

Overview

Advance Technical Information TM www.DataSheet4U.com PolarHT Power MOSFET IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A mΩ N-Channel Enhancement Mode Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 V V V A A A A mJ J V/ns TO-3P (IXTQ) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 110 75 250 60 40 1.0 10 480 -55 ...

+175 175 -55 ...

Key Features

z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb. in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 150°C Characteristic Values Min. Typ. Max. 100 2.5 5.

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