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IXTT52N30P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTT52N30P datasheet PDF. This datasheet also includes the IXTQ52N30P variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXTQ52N30P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Overview

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P) TO-286 TO-3P Maximum Ratings 300 V 300 V  20 V  30 V 52 A 150 A 52 A 1 J 10 V/ns 400 W -55 ...

+150 150 -55 ...

+150 300 260  C  C  C °C °C 1.13 / 10 4.0 5.5 Nm/lb.in g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min.

Key Features

  • Fast Intrinsic Rectifier.
  • Avalanche Rated.
  • Low RDS(ON) and QG.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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