Download the IXTV230N085TS datasheet PDF.
This datasheet also covers the IXTV230N085T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values Min. Typ. Max. 85 V
2.0 4.0 V
± 200 nA
5 µA 250 µA 3.7 4.4 mΩ
Advantages Easy to.
Note: The manufacturer provides a single datasheet file (IXTV230N085T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IXTV230N085TS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTV230N085TS. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTV230N085T IXTV230N085TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ ...
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cement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 230 4.4 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220) Maximum Ratings 85 V 85 V PLUS220 (IXTV) ± 20 230 75 520 V A G DS A PLUS220SMD (IXTV_S) A D (TAB) 40 A 1.0 J 3 550 -55 ... +175 175 -55 ..
IXTV230N085TS Datasheet
