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IXYS Corporation
IXYS Corporation

IXTV250N075T Datasheet Preview

IXTV250N075T Datasheet

Power MOSFET

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IXTV250N075T pdf
Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTV250N075T
IXTV250N075TS
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
75
250
4.0
V
A
m
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 M
Transient
TC = 25° C
Lead Current Limit, RMS
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 175° C, RG = 3.3
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS220)
Maximum Ratings
75
75
± 20
250
75
560
40
1.5
V
V
V
A
A
A
A
J
3 V/ns
550
-55 ... +175
175
-55 ... +175
300
260
11...65 /2.5...15
3
W
°C
°C
°C
°C
°C
N/lb.
g
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
RDS(on)
VGS = 10 V, ID = 50 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
± 200 nA
25 µA
250 µA
3.3 4.0 m
PLUS220 (IXTV)
G DS
PLUS220SMD (IXTV_S)
D (TAB)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
© 2006 IXYS CORPORATION All rights reserved
DS99696(11/06)



IXYS Corporation
IXYS Corporation

IXTV250N075T Datasheet Preview

IXTV250N075T Datasheet

Power MOSFET

No Preview Available !

IXTV250N075T pdf
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
gfs VDS= 10 V; ID = 60 A, Note 1
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A
RG = 3.3 (External)
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
RthJC
RthCS
PLUS220
Characteristic Values
Min. Typ. Max.
75 122
S
9900
1330
285
pF
pF
pF
32 ns
50 ns
58 ns
45 ns
200 nC
50 nC
60 nC
0.27 °C/W
.25 °C/W
IXTV250N075T
IXTV250N075TS
PLUS220 (IXTV) Outline
Terminals:
1 - Gate
3 - Source
2 - Drain
Tab - Drain
Source-Drain Diode
Symbol
Values
Test Conditions
(TJ = 25° C unless otherwise specified)
IS VGS = 0 V
ISM Pulse width limited by TJM
VSD IF = 50 A, VGS = 0 V, Note 1
trr IF = 50 A, -di/dt = 100 A/µs
VR = 25 V, VGS = 0 V
Characteristic
Min. Typ. Max.
250 A
560 A
1.0 V
80 ns
PLUS220SMD (IXTV_S) Outline
Note 1. Pulse test, t 300 µs, duty cycle d 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location is 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537


Part Number IXTV250N075T
Description Power MOSFET
Maker IXYS Corporation
Total Page 5 Pages
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IXTV250N075T pdf
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