Download the IXTV250N075TS datasheet PDF.
This datasheet also covers the IXTV250N075T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density.
Note: The manufacturer provides a single datasheet file (IXTV250N075T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IXTV250N075TS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTV250N075TS. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTV250N075T IXTV250N075TS N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ ...
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cement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 250 4.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 3.3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting force (PLUS220) Maximum Ratings 75 75 ± 20 250 75 560 40 1.5 V V V A A A A J 3 V/ns 550 -55 ... +175 175 -55 ... +175 300 260 11...65 /2.5...15 3 W °C °C