* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(
IXUC100N055 Datasheet (419.73 KB)
IXUC100N055
IXYS Corporation
419.73 KB
55v trench power mosfet.
www.DataSheet.co.kr ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC100N055 VDSS = 55 V ID2.
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