* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low cathode to tab capacitance (< 25 pF)
* International standard package
* Planar passivated chips
* Very short recovery time
L356
IXYS Corporation
44.77 KB
Hiperdynfred epitaxial diode with soft recovery.
DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) IFAV = 9 A VRRM = 600 V trr = 15 ns VRSM V 600 .
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