MEA75-12DA - Fast Recovery Epitaxial Diode (FRED) Module
IXYS (now Littelfuse)
Key Features
International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873
q q q q q q q
TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg THmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 100 A; IF = 300 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8.
Full PDF Text Transcription for MEA75-12DA (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MEA75-12DA. For precise diagrams, and layout, please refer to the original PDF.
Fast Recovery Epitaxial Diode (FRED) Module Preliminary data VRSM V 1200 www.DataSheet4U.com VRRM V 1200 Type MEA75-12 DA 1 2 3 MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA VRR...
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1200 Type MEA75-12 DA 1 2 3 MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA VRRM = 1200 V IFAV = 75 A trr = 250 ns TO-240 AA 1 3 2 MEK 75-12 DA 1 2 3 MEE 75-12 DA 1 2 3 Symbol IFRMS IFAV IFRM IFSM Test Conditions Tcase= 75 °C Tcase= 75 °C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 107 75 TBD 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s °C °C °C W V~ V~ TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.
MEA75-12DA Datasheet
