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IXYS Corporation

MKI50-06A7 Datasheet Preview

MKI50-06A7 Datasheet

IGBT Modules H-Bridge

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MKI 50-06 A7
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
I = 72 A
C25
VCES
= 600 V
VCE(sat) typ. = 1.9 V
Preliminary Data
13
T1
1
2
T2
3
4
17
T5
D1 9
10
T6
D2 11
12
D5
16
14
D6
IGBTs
Symbol
VCES
VGES
IC25
IC80
RBSOA
tSC
(SCSOA)
Ptot
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V
± 20 V
TC = 25°C
TC = 80°C
72
50
VGE
=
±15
V;
R
G
=
22
;
TVJ
=
125°C
Clamped inductive load; L = 100 µH
ICM = 100
VCEK VCES
VCE = VCES; VGE = ±15 V; RG = 22 ; TVJ = 125°C
non-repetitive
10
A
A
A
µs
TC = 25°C
225 W
Symbol
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
t
f
Eon
Eoff
C
ies
QGon
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
50
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
V = 300 V; I = 50 A
CE C
VGE = ±15 V; RG = 22
1.9 2.4 V
2.2 V
4.5 6.5 V
0.6 mA
0.7 mA
200 nA
50 ns
60 ns
300 ns
30 ns
2.3 mJ
1.7 mJ
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 300V; VGE = 15 V; IC = 50 A
(per IGBT)
2800
120
pF
nC
0.55 K/W
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
1-4




IXYS Corporation

MKI50-06A7 Datasheet Preview

MKI50-06A7 Datasheet

IGBT Modules H-Bridge

No Preview Available !

www.DataSheet4U.com
MKI 50-06 A7
Diodes
Symbol
IF25
IF80
Conditions
TC = 25°C
TC = 80°C
Maximum Ratings
72 A
45 A
Equivalent Circuits for Simulation
Conduction
Symbol
VF
IRM
trr
R
thJC
Module
Symbol
TVJ
Tstg
VISOL
Md
Symbol
Rpin-chip
dS
d
A
R
thCH
Weight
Conditions
IF = 50 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C
VR = 300 V; VGE = 0 V
(per diode)
Characteristic Values
min. typ. max.
1.6 1.8 V
1.3 V
25 A
90 ns
1.19 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 0.82 V; R0 = 28 m
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 0.89 V; R0 = 8 m
Thermal Response
Conditions
IISOL 1 mA; 50/60 Hz
Mounting torque (M5)
Conditions
Creepage distance on surface
Strike distance in air
with heatsink compound
Maximum Ratings
-40...+150
-40...+125
°C
°C
2500
V~
2.7 - 3.3
Nm
Characteristic Values
min. typ. max.
5 m
6 mm
6 mm
0.02 K/W
180 g
IGBT (typ.)
Cth1 = 0.201 J/K; Rth1 = 0.42 K/W
Cth2 = 1.252 J/K; Rth2 = 0.131 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.116 J/K; Rth1 = 0.973 K/W
Cth2 = 0.88 J/K; Rth2 = 0.277 K/W
Dimensions in mm (1 mm = 0.0394")
© 2002 IXYS All rights reserved
2-4


Part Number MKI50-06A7
Description IGBT Modules H-Bridge
Maker IXYS Corporation
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