* z z z TO-220 (IXTP) D (TAB) G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb.in. 4 2 g g z International standard packages Low RDS (on) Rated for unclamped Inductive loa
TP3N120
IXYS Corporation
171.99 KB
ictp3n120.
www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXTA 3N120 IXTP 3N120 VDSS 1200 V ID25 3A R.
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