TP3N120 Description
.. High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt IXTA 3N120 IXTP 3N120 VDSS 1200 V ID25 3A RDS(on) 4.5 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ.
TP3N120 Key Features
- VDSS, ID = 0.5
- VDSS, ID = 0.5
- ID25 8 21 0.62 (TO-220) 0.25 60 S pF pF pF ns ns ns ns nC nC nC K/W K/W
- Gate 3
- Source 2
- Drain 4
- Drain Bottom Side
- ID25, Note 1