VHM40-06P1 Description
IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ±20 38 25 6 1.8 1 V V A A V/ns J.
VHM40-06P1 Key Features
- Electrical isolation towards the heatsink
- Low coupling capacitance to the heatsink for reduced EMI
- High power dissipation
- High temperature cycling capability of chip on DCB
- solderable pins for DCB mounting fast CoolMOS power MOSFET
- 2nd generation
- High blocking capability
- Low on resistance
- Avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness Enhanced total power density