VUO30-08NO3 Datasheet | IXYS

Features / Advantages: - Package with DCB ceramic - Reduced weight - Improved temperature and power cycling - Planar passivated chips - Very low forward voltage drop - Very low leakage current Applications: - Diode for main rectification - For three phase bridge configurations - Supplies for DC power equipment - Input rectifiers for PWM inverter - Battery DC power supplies - Field supply for DC motors Package: FO-F-B - Isolation Voltage: 3600 V~ - Industry standard outline - Ro HS pliant - ¼“ fast-on terminals - Easy to mount with two screws - Base plate: DCB ceramic - Reduced weight - Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130515b Rectifier Symbol VRSM VRRM IR I DAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 800 V VR = 800 V forward voltage drop IF = 15 A IF = 45 A IF = 15 A IF = 45 A bridge output...