VUO36-14NO8 Datasheet | IXYS

Features / Advantages: - Planar passivated chips - Very low leakage current - Very low forward voltage drop - Improved thermal behaviour Applications: - Diode for main rectification - For three phase bridge configurations - Supplies for DC power equipment - Input rectifiers for PWM inverter - Battery DC power supplies - Field supply for DC motors Package: FO-B - Industry standard outline - Ro HS pliant - ¼“ fast-on terminals - Easy to mount with one screw IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130529c Rectifier Symbol VRSM VRRM IR I DAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 1400 V VR = 1400 V forward voltage drop IF = 15 A IF = 45 A IF = 15 A IF = 45 A bridge output current TC = 85°C rectangular d=⅓ VF0 r F R th JC R th CH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 400 V; f = 1 MHz TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ =...