VUO55-12NO7 Datasheet | IXYS

Features / Advantages: - Package with DCB ceramic - Improved temperature and power cycling - Planar passivated chips - Very low forward voltage drop - Very low leakage current Applications: - Diode for main rectification - For three phase bridge configurations - Supplies for DC power equipment - Input rectifiers for PWM inverter - Battery DC power supplies - Field supply for DC motors Package: PWS-B - Industry standard outline - Ro HS pliant - Easy to mount with two screws - Base plate: Aluminium internally DCB isolated - Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130306a Rectifier Symbol VRSM VRRM IR I DAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 1200 V VR = 1200 V forward voltage drop IF = 20 A IF = 60 A IF = 20 A IF = 60 A bridge output current TC = 85°C rectangular d=⅓ VF0 r F R th JC R th CH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction...