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2SC2026 - Silicon NPN RF Transistor

Datasheet Summary

Description

NF= 3.0dB TYP.

Gpe= 15dB TYP.

fT= 2.0GHz TYP.

100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noi

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Datasheet Details

Part number 2SC2026
Manufacturer Inchange
File Size 175.51 KB
Description Silicon NPN RF Transistor
Datasheet download datasheet 2SC2026 Datasheet
Additional preview pages of the 2SC2026 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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