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2SC2026 Datasheet Preview

2SC2026 Datasheet

Silicon NPN RF Transistor

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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC2026
DESCRIPTION
·Low Noise
NF= 3.0dB TYP. @ f= 500MHz
·High Power Gain
Gpe= 15dB TYP. @ f= 500MHz
·High Gain Bandwidth Product
fT= 2.0GHz TYP.
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low noise amplifiers in the VHF~UHF
band.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
30
V
VCEO Collector-Emitter Voltage
14
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
50
mA
0.25
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




Inchange

2SC2026 Datasheet Preview

2SC2026 Datasheet

Silicon NPN RF Transistor

No Preview Available !

isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC2026
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 15V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
0.1 μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
25
200
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
15 2.0
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1.0MHz
0.75 1.1 pF
Gpe
Power Gain
NF
Noise Figure
VCE= 10 V,IC= 10mA; f= 500MHz
VCE= 10 V,IC= 3mA; f= 500MHz;
RG= 50Ω
13 15
dB
3
4
dB
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number 2SC2026
Description Silicon NPN RF Transistor
Maker Inchange
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2SC2026 Datasheet PDF






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