Download X0402MF Datasheet PDF
Inchange Semiconductor
X0402MF
FEATURES - IT(RMS)=4A - VDRM=600V - Low IGT<200u A - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Highly sensitive triggering levels - For capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(AV) Repetitive peak reverse voltage On-state current 180°conduction angle ITSM PG(AV) Non-repetitive surge peak on-state current t= 20ms Average gate power dissipation Tj = 125℃ Tj Junction temperature Tstg Storage temperature ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM, VRM=VRRM, ,Tj=125℃ IDRM Repetitive peak off-state current VDM=VDRM, VDM=VDRM ,Tj=125℃ VTM On-state voltage ITM= 8A, tp = 380 µs Gate-trigger current VD=12V, RL=140Ω,...