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2N10L - N-Channel MOSFET Transistor

Features

  • Drain Current ID= 2A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max).
  • Fast Switching.

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Datasheet Details

Part number 2N10L
Manufacturer Inchange Semiconductor
File Size 59.24 KB
Description N-Channel MOSFET Transistor
Datasheet download datasheet 2N10L Datasheet
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Full PDF Text Transcription

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2N10L ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±30 V V ID Drain Current-Continuous 2A IDM Drain Current-Single Plused 5A PD Total Dissipation @TC=25℃ 25 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.
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