Datasheet Details
| Part number | 2N3184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 171.90 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 2N3184 Datasheet
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| Part number | 2N3184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 171.90 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
2N3184 Datasheet
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·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W 2N3184 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -2A;
VCE=-0.3V ICEO Collector Cutoff Current VCE= -80V;
isc Silicon PNP Power Transistor.
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