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2N3197 Datasheet Preview

2N3197 Datasheet

Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N3197
DESCRIPTION
·Excellent Safe Operating Area
·With TO-3 package
·Low collector saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For medium-speed switching and amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-10 V
IC Collector Current-Continuous
-5 A
PC
TJ, Tstg
Collector Power Dissipation@TC=25
75
Operating and Storage Junction
Temperature Range
-65~+200
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.17 /W
isc websitewww.iscsemi.com1
isc & iscsemi is registered trademark




Inchange Semiconductor

2N3197 Datasheet Preview

2N3197 Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon PNP Power Transistors
INCHANGE Semiconductor
2N3197
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; VCE=-0.6V
ICEO Collector Cutoff Current
VCE= -80V; IB=0
IEBO Emitter Cutoff Current
VEB= -5V; IC=0
hFE DC Current Gain
IC= -3A ; VCE= -3V
MIN MAX UNIT
-0.9 V
-1.9 V
-5.0 mA
-1.0 mA
10 30
isc websitewww.iscsemi.com2
isc & iscsemi is registered trademark


Part Number 2N3197
Description Silicon PNP Power Transistor
Maker Inchange Semiconductor
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2N3197 Datasheet PDF






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