2N3440 transistor equivalent, silicon npn power transistor.
*Designed for high voltage and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
V.
*Collector
–Emitter Sustaining Voltage-
: VCEO(SUS) = 250 V(Min)
*DC Current Gain-
: hFE = 40(Min) @ IC= 20mA
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed f.
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