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Inchange Semiconductor

2N3791 Datasheet Preview

2N3791 Datasheet

Silicon PNP Power Transistors

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Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type 2N3715 ,2N3716
·Excellent safe operating area
APPLICATIONS
Designed for medium-speed switching
and amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Product Specification
2N3791 2N3792
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N3791
2N3792
Open emitter
VCEO
Collector-emitter voltage
2N3791
2N3792
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
IB Base current
PD Total Power Dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R(th) jc
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-7
-10
-4
150
200
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.17
UNIT
/W




Inchange Semiconductor

2N3791 Datasheet Preview

2N3791 Datasheet

Silicon PNP Power Transistors

No Preview Available !

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter
sustaining voltage
2N3791
2N3792
CONDITIONS
IC=-0.2A ;IB=0
VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBE(on)-1 Base-emitter on voltage
IC=-5A ; VCE=-2V
VBE(on)-2 Base-emitter on voltage
ICEX
Collector
cut-off current
2N3791
2N3792
IEBO Emitter cut-off current
IC=-10A ; VCE=-4V
VCE=-60V; VBE(off)=-1.5V
TC=150
VCE=-80V; VBE(off)=-1.5V
TC=150
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
fT Transition frequency
IC=-0.5A;VCE=-10V
Product Specification
2N3791 2N3792
MIN TYP. MAX UNIT
-60 V
-80 V
-1.0 V
-1.8 V
-4.0 V
-1.0
-5.0
mA
-1.0
-5.0
mA
-5.0 mA
50 180
30
4 MHz
2


Part Number 2N3791
Description Silicon PNP Power Transistors
Maker Inchange Semiconductor
PDF Download

2N3791 Datasheet PDF






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