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2N4395 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.

APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 60 V Collector-Emitter Voltage 40 V Emitter-Base Voltage 4 V Collector Current-Continuous 5 A Collector Power Dissipation@TC=25℃ 62 W Junction Temperature 150 ℃ Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2 ℃/W 2N4395 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=30mA;

IB= 0 ICEO Collector Cutoff Current VCE=40V;IB= 0 IEBO Emitter Cutoff Current VEB= 4V;

Overview

isc Silicon NPN Power Transistor.