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2N5401 - Silicon PNP Power Transistor

Description

PNP high-voltage transistor

Low current (max.

High voltage (max.

Complements to 2N5551.

in high voltage applications , such as telephony applications.

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Datasheet Details

Part number 2N5401
Manufacturer Inchange Semiconductor
File Size 122.57 KB
Description Silicon PNP Power Transistor
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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5551. isc Product Specification 2N5401 APPLICATIONS ·Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous 0.3 A ICM Collector Current-Peak 0.6 A IBM Base Current-Peak PC Collector Power Dissipation @ Ta<50℃ 0.1 A 0.63 W J Junction Temperature Tstg Storage Temperature Range 150 ℃ -65~150 ℃ isc website：www.iscsemi.
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