2N5415 - Silicon PNP Power Transistor

Description

PNP high-voltage transistor

Low current (max.

High voltage (max.

amplification in military, industrial and consumer equipment applications.

Inchange Semiconductor

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Datasheet Details

Part number	2N5415
Manufacturer	Inchange Semiconductor
File Size	138.92 KB
Description	Silicon PNP Power Transistor
Datasheet	2N5415 Datasheet
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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 200 mA) ·High voltage (max. 300 V) isc Product Specification 2N5415 APPLICATIONS ·Designed for Switching and linear amplification in military, industrial and consumer equipment applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4V IC Collector Current-Continuous 0.2 A ICM Peak Collector Current 0.4 A IBM Peak Base cCurrent Collector Power Dissipation @ Ta<50℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 1.0 W 10 200 ℃ Tstg Storage Temperature Range -60~200 ℃ isc website：www.iscsemi.

Published: Jun 22, 2016 |