Datasheet4U Logo Datasheet4U.com

2N5551 - Silicon NPN Power Transistor

Description

NPN high-voltage transistor

Low current (max.

High voltage (max.

Complements to 2N5401.

in high voltage applications , such as telephony applications.

📥 Download Datasheet

Datasheet preview – 2N5551

Datasheet Details

Part number 2N5551
Manufacturer Inchange Semiconductor
File Size 122.07 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N5551 Datasheet
Additional preview pages of the 2N5551 datasheet.

📁 Similar Datasheet

  • 2N5551 - Silicon NPN Transistor (NTE)
  • 2N5551 - Amplifier Transistors (Motorola)
  • 2N5551 - NPN General Purpose Amplifier (Fairchild Semiconductor)
  • 2N5551 - NPN Amplifier (ON Semiconductor)
  • 2N5551 - NPN Transistor (SeCoS)
  • 2N5551 - Bipolar Transistor (Multicomp)
  • 2N5551 - NPN TRANSISTOR (KEC)
  • 2N5551 - HIGH VOLTAGE SWITCHING TRANSISTOR (UTC)
  • 2N5551 - NPN high-voltage transistors (Philips)
  • 2N5551 - NPN Transistor (MCC)
Other Datasheets by Inchange Semiconductor
  • 2N5039 - Silicon NPN Power Transistors
  • 2N5240 - Silicon NPN Power Transistor
  • 2N5301 - Silicon NPN Power Transistors
  • 2N5303 - Silicon NPN Power Transistors
  • 2N5344 - Silicon PNP Power Transistor
  • 2N5401 - Silicon PNP Power Transistor
  • 2N5415 - Silicon PNP Power Transistor
  • 2N5493 - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·NPN high-voltage transistor ·Low current (max. 300 mA) ·High voltage (max. 160 V) ·Complements to 2N5401. isc Product Specification 2N5551 APPLICATIONS ·Designed for Switching and amplification in high voltage applications , such as telephony applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 0.3 A ICM Collector Current-Peak 0.6 A IBM Base Current-Peak PC Collector Power Dissipation @ Ta<50℃ 0.1 A 0.63 W J Junction Temperature Tstg Storage Temperature Range 150 ℃ -65~150 ℃ isc website：www.iscsemi.
Published: |