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Inchange Semiconductor

2N5930 Datasheet Preview

2N5930 Datasheet

Silicon NPN Power Transistors

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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5930
DESCRIPTION
·DC Current Gain-
: hFE= 20-100@IC= 10A
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 15A
APPLICATIONS
·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
30 A
IB Base Current-Continuous
7.5 A
PC Collector Power Dissipation @TC=25175
W
TJ Junction Temperature
150
Tstg Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.875 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2N5930 Datasheet Preview

2N5930 Datasheet

Silicon NPN Power Transistors

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5930
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 7.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 30A; IB= 7.5A
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 4V
ICEO Collector Cutoff Current
VCE= 120V; IB= 0
ICBO Collector Cutoff Current
VCB= 130V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10A ; VCE= 4V
hFE-2
DC Current Gain
IC= 30A ; VCE= 4V
fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V ;ftest= 1MHz
MIN TYP. MAX UNIT
120 V
1.0 V
4.0 V
2.5 V
1.5 V
2.0 mA
1.0 mA
1.0 mA
20 100
4
30 MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N5930
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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