Datasheet4U Logo Datasheet4U.com

2N6042 - Silicon PNP Power Transistors

2N6042 Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min). Low Collector-Emitter S.

2N6042 Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 ICM Collecto

📥 Download Datasheet

Preview of 2N6042 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2N6042
Manufacturer
Inchange Semiconductor
File Size
144.12 KB
Datasheet
2N6042-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

📁 Related Datasheet

  • 2N6040 - COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6041 - COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6043 - COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6044 - COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6045 - COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
  • 2N6045G - NPN Transistor (INCHANGE)
  • 2N6046 - NPN Transistor (SSDI)
  • 2N6047 - NPN Transistor (SSDI)

📌 All Tags

Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor 2N6042-like datasheet