Datasheet Details
| Part number | 2N6289 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.85 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N6289 Download (PDF) |
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| Part number | 2N6289 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.85 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N6289 Download (PDF) |
|
|
|
·DC Current Gain- : hFE = 30-150@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 30V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A;
IB= 3A VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current ICEO Collector Cutoff Current IC= 7A ;
VCE= 4V VCE= 40V;
isc Silicon NPN Power Transistor 2N6289.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6289 | Power Transistors | RCA |
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