power transistor.
*Designed for high speed, high voltage switching systems.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALU.
*High Current Capability
*Good Linearity of hFE
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.)
*Complement to Type 2SC2431
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICAT.
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