power transistor.
*Designed for power amplifer and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
.
*High Current Capability
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min.)
*Complement to Type 2SC2460
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for pow.
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