Datasheet4U Logo Datasheet4U.com

2SA1050 - POWER TRANSISTOR

📥 Download Datasheet

Preview of 2SA1050 PDF
datasheet Preview Page 2

2SA1050 Product details

Description

High Current Capability Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min.) Complement to Type 2SC2460 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifer and general purpose applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-

📁 2SA1050 Similar Datasheet

  • 2SA1052 - Silicon PNP Epitaxial Transistor (Hitachi Semiconductor)
  • 2SA100 - Ge PNP Drift Transistor (ETC)
  • 2SA1002 - Silicon PNP Power Transistor (INCHANGE)
  • 2SA1006 - PNP/NPN TRANSISTOR (NEC)
  • 2SA1006A - PNP/NPN TRANSISTOR (NEC)
  • 2SA1006B - PNP/NPN TRANSISTOR (NEC)
  • 2SA1008 - Silicon POwer Transistors (SavantIC)
  • 2SA1009A - PNP Transistor (INCHANGE)
Other Datasheets by Inchange Semiconductor
Published: |