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2SA1060 Datasheet Preview

2SA1060 Datasheet

POWER TRANSISTOR

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isc Silicon PNP Power Transistor
2SA1060
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·High Power Dissipation
·Complement to Type 2SC2484
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high power audio frequency amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-8
A
60
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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2SA1060 Datasheet Preview

2SA1060 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
2SA1060
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -0.02A ; VCE= -5V
hFE-2
DC Current Gain
IC= -1A ; VCE= -5V
hFE-3
DC Current Gain
IC= -3A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT
-80
V
-2.0 V
-1.8 V
-50 μA
-50 μA
20
40
200
20
20
MHz
hFE-2 Classifications
R
Q
P
40-80 60-120 100-200
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA1060
Description POWER TRANSISTOR
Maker Inchange Semiconductor
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