isc Silicon PNP Power Transistor
2SA1062
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on) Base-Emitter On Voltage
IC= -5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -0.02A; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT
-120
V
-2.0 V
-1.8 V
-50 μA
-50 μA
20
40
220
20
20
MHz
hFE-2 Classifications
R
Q
P
40-80 60-120 100-220
Notice:
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
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