isc Silicon PNP Power Transistor
2SA1062
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on) Base-Emitter On Voltage
IC= -5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -0.02A; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -5A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT
-120
V
-2.0 V
-1.8 V
-50 μA
-50 μA
20
40
220
20
20
MHz
hFE-2 Classifications
R
Q
P
40-80 60-120 100-220
Notice：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
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incidental damages.
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