2SA1068
2SA1068 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
- Good Linearity of h FE
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
VCEO Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-10
Collector Current-Peak
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-15
℃
Tstg
Storage Temperature
-65~150 ℃ isc website:.iscsemi....