Datasheet Details
| Part number | 2SA1069A-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.79 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SA1069A-Z Download (PDF) |
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| Part number | 2SA1069A-Z |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 182.79 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2SA1069A-Z Download (PDF) |
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·Low Collector Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching regulators,DC/DC converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -12 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.5 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1069A-Z isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1069A-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3.0A ;
IB= -0.3A, L=1mH VCEX(SUS)-1 VCEX(SUS)-2 Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage IC= -3.0A ;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1069A | Silicon POwer Transistors | SavantIC |
 |
2SA1069A | PNP Transistor | Renesas |
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2SA1069 | Silicon POwer Transistors | SavantIC |
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2SA1069 | PNP Transistor | Renesas |
| Part Number | Description |
|---|---|
| 2SA1069A | POWER TRANSISTOR |
| 2SA1069 | POWER TRANSISTOR |
| 2SA1069-Z | Silicon PNP Power Transistor |
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