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Inchange Semiconductor

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2SA1074 Datasheet

POWER TRANSISTOR

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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1074
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
APPLICATIONS
·For high power audio ,stepping
motor and other linear applications
·Relay or solenoid drviers
·DC-DC converters inverters
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IBB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-160
-160
-7
-15
-7
150
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MAX
0.98
UNIT
/W




Inchange Semiconductor

2SA1074 Datasheet Preview

2SA1074 Datasheet

POWER TRANSISTOR

No Preview Available !

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1074
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0
-160
V
VCEsat-1 Collector-emitter saturation voltage IC=-4A; IB=-0.4A
-1.1 V
VCEsat-2 Collector-emitter saturation voltage IC=-10A; IB=-3.3A
-3.0 V
VBE Base-emitter on voltage
IC=-4A ; VCE=-4V
-1.8 V
ICEO Collector cut-off current
ICEV Collector cut-off current
IEBO Emitter cut-off current
VCE=-60V; VBE(off)=0
VCE=Rated Value; VBE(off)=1.5V
TC=150
VEB=-7V; IC=0
-0.1 mA
-1.0
-6.0
mA
-0.1 mA
hFE-1
DC current gain
IC=-4A ; VCE=-4V
20
hFE-2
DC current gain
IC=-10A ; VCE=-4V
5
2


Part Number 2SA1074
Description POWER TRANSISTOR
Maker Inchange Semiconductor
Total Page 3 Pages
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