2SA1079
2SA1079 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min.)
- Good Linearity of h FE
- Wide Area of Safe Operation
- plement to Type 2SC2529
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- High frequency power amplifiers
- Audio power amplifiers and drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
VCEO Collector-Emitter Voltage
-160
VEBO
Emitter-Base Voltage
-7
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
-2
℃
Tstg
Storage Temperature Range
-65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
