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2SA1080 - Silicon PNP Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) Good Linearity of hFE Complement to Type 2SC2530 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for medium power amplifier applications.

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Datasheet Details

Part number 2SA1080
Manufacturer Inchange Semiconductor
File Size 214.15 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·Complement to Type 2SC2530 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.
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