Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180V (Min)
Large Collector Power Dissipation
Complement to Type 2SC2660A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier and TV vertical deflection
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isc Silicon PNP Power Transistor
2SA1133A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180V (Min) ·Large Collector Power Dissipation ·Complement to Type 2SC2660A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and TV vertical deflection
output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
PC
Collector Power Dissipation
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.
2SA1133A Datasheet
