2SA1169
2SA1169 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min)
- High Power Dissipation
- plement to Type 2SC2773
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
VCEO
Collector-Emitter Voltage
-200
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
-15
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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