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Inchange Semiconductor
Inchange Semiconductor

2SA1173 Datasheet Preview

2SA1173 Datasheet

Silicon PNP Power Transistor

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2SA1173 pdf
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-140V(Min)
·Good Linearity of hFE
·Low Saturation Voltage
APPLICATIONS
·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
-140
-5
-0.05
2
150
-55~150
V
V
A
W
isc Product Specification
2SA1173
isc websitewww.iscsemi.cn
isc & iscsemi is registered trademark



Inchange Semiconductor
Inchange Semiconductor

2SA1173 Datasheet Preview

2SA1173 Datasheet

Silicon PNP Power Transistor

No Preview Available !

2SA1173 pdf
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1173
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -20mA; IB= -2mA
ICBO Collector Cutoff Current
VCB= -140V; IE= 0
IEBO Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
fT
DC Current Gain
Current-GainBandwidth Product
IC= -10mA ; VCE= -10V
IC= -10mA ; VCE= -10V
COB Output Capacitance
IE=0 ; VCB= -10V,ftest= 1MHz
MIN TYP. MAX UNIT
-0.6 V
-1 V
-0.1 μ A
-1 μ A
90 400
80 MHz
2.5 pF
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number 2SA1173
Description Silicon PNP Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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