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2SA1265 - Silicon PNP Power Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -7A Good Linearity of hFE Complement to Type 2SC3182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fideli

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Datasheet Details

Part number 2SA1265
Manufacturer Inchange Semiconductor
File Size 220.84 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -7A ·Good Linearity of hFE ·Complement to Type 2SC3182 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1265 isc website：www.iscsemi.
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