Datasheet Details
| Part number | 2SA1280 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.39 KB |
| Description | POWER TRANSISTOR |
| Datasheet |
 2SA1280_InchangeSemiconductor.pdf
|
| Part number | 2SA1280 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.39 KB |
| Description | POWER TRANSISTOR |
| Datasheet |
2SA1280_InchangeSemiconductor.pdf
|
Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃
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