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2SA1444 - Silicon PNP Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

Features

  • a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.

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Datasheet Details

Part number 2SA1444
Manufacturer Inchange Semiconductor
File Size 218.09 KB
Description Silicon PNP Power Transistor
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Full PDF Text Transcription

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A) ·Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.
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