2SA1513 transistor equivalent, power transistor.
*Designed for high speed and high power switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
*High Currrent Capacity
*Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ IC= -12A
*Minimum Lot-to-Lot variations for robust device
performance and reliable operati.
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