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2SA1593 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·High breakdown voltage and large current capacity ·Fast switching speed ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC4135 APPLICATIONS ·Power supplies, relay drivers,lamp drivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -3 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1593 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A;

IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1.0A;

Overview

isc Silicon PNP Power Transistor.